Preparation of a-SiNx thin film with low hydrogen content by inductively coupled plasma enhanced chemical vapor deposition

Journal of the Electrochemical Society

Volumn 145, Issue 2, 1998, Pages 652-658

  Han, Sang Soo ^a   Jun, Byung Hyuk ^a   No, Kwangsoo ^a   Bae, Byeong Soo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DISSOCIATION; HYDROGEN; HYDROGEN BONDS; NITRATES; PLASMA APPLICATIONS; REFRACTIVE INDEX; SILANES; SILICON NITRIDE; STOICHIOMETRY; THERMAL EFFECTS;

INDUCTIVELY COUPLED PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0031996428     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838318     Document Type: Article

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