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Volumn 121, Issue 1, 2005, Pages 275-281
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Broadband MEMS shunt switches using PZT/HfO2 multi-layered high k dielectrics for high switching isolation
b
Netspace Inc
(Japan)
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Author keywords
Capacitive switch; Hafnium oxide; High dielectric constant; PZT; RF MEMS
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Indexed keywords
ACCELERATION CONTROL;
BROADBAND AMPLIFIERS;
DIELECTRIC DEVICES;
ELECTRIC DISTORTION;
ELECTRIC FIELDS;
GOLD COMPOUNDS;
HAFNIUM COMPOUNDS;
LEAD COMPOUNDS;
MICROELECTROMECHANICAL DEVICES;
MOBILE TELECOMMUNICATION SYSTEMS;
TENSILE STRESS;
THERMODYNAMIC STABILITY;
BIAS-STRESSING TEST;
CAPACITIVE SWITCHES;
HAFNIUM DIOXIDE;
HIGH DIELECTRIC CONSTANTS;
RF-MEMS;
SWITCHES;
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EID: 21744439705
PISSN: 09244247
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sna.2005.01.026 Document Type: Article |
Times cited : (20)
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References (8)
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