Atomic layer deposition (ALD) technology for reliable RF MEMS

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 1229-1232

  Hoivik, N ^a   Elam, J W ^a   George, S M ^a   Gupta, K C ^a   Bright, V M ^a   Lee, Y C ^a  

^a UCB 450   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; COATING TECHNIQUES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; FAILURE ANALYSIS; INORGANIC COATINGS; MOISTURE; NANOTECHNOLOGY; RELIABILITY; ZINC OXIDE;

ATOMIC LAYER DEPOSITION; CHEMICAL TREATMENT; RADIOFREQUENCY DEVICES;

MICROELECTROMECHANICAL DEVICES;

EID: 0036070286     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. RF MEMS from a device perspective
2. Special issue on RF Applications of MEMS and micromachinging
3. Lifetime characterization of capacitive RF MEMS switches
4. Atomic layer deposition of conformal dielectric and protective coatings for released micro-electromechanical devices
5. Surface chemistry for atomic layer growth
6. Digitally controllable variable high-Q MEMS capacitor for RF applications