Identifying degradation mechanisms in RF MEMS capacitive switches

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2008, Pages 168-171

  Herfst, R W ^a   Steeneken, P G ^a   Schmitz, J ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE MICROMECHANICS; ELECTRIC SWITCHES; MECHANICAL ENGINEERING; MECHANICS; MECHANISMS; MECHATRONICS; MEMS; MICROELECTROMECHANICAL DEVICES; REACTIVE ION ETCHING; STRESSES; SULFATE MINERALS;

C-V CURVES; DEGRADATION MECHANISMS; DIELECTRIC CHARGING; INTERNATIONAL CONFERENCES; MECHANICAL DEFORMATIONS; MICRO-ELECTRO MECHANICAL SYSTEMS; PULL-IN; PULL-OUT; RF MEMS CAPACITIVE SWITCHES; STRESS CONDITIONS;

DEGRADATION;

EID: 50149089196     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2008.4443619     Document Type: Conference Paper

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