Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices

Semiconductor Science and Technology

Volumn 19, Issue 2, 2004, Pages 133-141

  Del Prado, A ^a   San Andres E ^a   Martil I ^a   Gonzalez Diaz G ^a   Kliefoth, K ^b   Fussel W ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE MEASUREMENTS; INSULATOR PROPERTIES; SURFACE PHOTOVOLTAGE MEASUREMENTS;

CAPACITANCE MEASUREMENT; DEPOSITION; ELECTRIC INSULATORS; ELECTRON CYCLOTRON RESONANCE; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; PASSIVATION; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

MOS DEVICES;

EID: 1342306197     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/2/001     Document Type: Article

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