Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1248-1252

  Lamhamdi, M ^a   Pons, P ^a   Zaghloul, U ^a   Boudou, L ^a   Coccetti, F ^a   Guastavino, J ^a   Segui, Y ^a   Papaioannou, G ^a,b   Plana, R ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE MICROMECHANICS; MEMS; MICROELECTROMECHANICAL DEVICES; MOLECULAR BEAM EPITAXY; NITRIDES; NONMETALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON NITRIDE; THICK FILMS;

CAPACITIVE SWITCHING; DIELECTRIC CHARGING; DISCHARGING PROCESSES; RF-MEMS; SILICON NITRIDE THIN FILMS; STRESS VOLTAGES; TEMPERATURE EFFECTS;

ELECTRIC SWITCHES;

EID: 50549101357     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.017     Document Type: Article

References (17)

1. Rottenberg X, et al. Distributed dielectric charging and its impact on RF MEMS devices. In: 12th GAAS symposium, Amsterdam; 2004. p. 475-8.
2. Yuan X., et al. Temperature acceleration of dielectric charging in RF MEMS capacitive switches. IEEE MTT-S Int Microwave Symp Dig (2006) 47
3. Exarchos M., Papandreou E., Pons P., Lamhamdi M., Papaioannou G.J., and Plana R. Charging of radiation induced defects in RF MEMS dielectric films. Microelectron Reliab 46 (2006) 1695-1699
4. Matsuura H., Yoshimoto M., and Matsunami H. Discharging current transient spectroscopy for evaluating traps in insulators. Jpn J Appl Phys 34 (1995) L185-L187
5. Lamhamdi M., et al. Charging-effects in RF capacitive switches influence of insulating layers composition. Microelectron Reliab 46 (2006) 1700-1704
6. Vandershueren J., and Casiot J. In: Braunlich P. (Ed). Topics in applied physics. Thermally stimulated relaxation in solids vol. 37 (1979), Springer-Verlag, Berlin 135 [chapter 4]
7. Papaioannou G., Exarchos M., Theonas V., Wang G., and Papapolymerou J. Temperature study of the dielectric polarization effects of capacitive RF MEMS switches. IEEE Trans Microwave Theory Techniq 53 (2005) 3467-3473
8. x:H thin film diodes. Appl Phys Lett 65 (1994) 2978-2980
9. Papandreou E., Lamhamdi M., Skoulikidou C.M., Pons P., Papaioannou G.J., and Plana R. Structure dependent charging process in RF MEMS capacitive switches. Microelectron Reliab 47 (2007) 1822-1827
10. Shannon J.M., and Morgan B.A. Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride. Appl Phys Lett 86 (1999) 1548-1550
11. Lau S.P., and Shannon J.M. Generation and annealing kinetics of current induced metastable defects in amorphous silicon alloys. J Non-Cryst Solids 266-269 (2000) 432-436
12. Oversluizen G., Zieren V., Johnson M.T., van der Put A.A., and Lodders W.H.M. Hot-electron degradation in hydrogenated amorphous-silicon-nitride thin-film diodes. J Appl Phys 89 (2001) 5491-5496
13. Bandet J., Despax B., and Caumont M. Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy. J Appl Phys 85 (1999) 7899-7904
14. Shakhnovich E.I., and Guti A.M. Relaxation to equilibrium in the random energy model. Europhys Lett 9 (1989) 569-574
15. Hohler R., Munzel J., Kasper G., and Hunklinger S. Dielectric long time relaxation of amorphous materials at low temperatures. Phys Rev B 43 (1991) 9220-9227
16. Papaioannou G, Papandreou E, Papapolymerou J, Daigler R. Dielectric discharging processes in RF-MEMS capacitive switches. In: Asian and pacific microwave conference; 2007. p. 437-40.
17. Lau S.P., Shannon J.M., and Sealy B.J. Changes in the Poole-Frenkel coefficient with current induced defect band conductivity of hydrogenated amorphous silicon nitride. J Non-Cryst Solids 277-230 (1998) 533-537