Atomic layer deposition of Al2O3/ZnO nano-scale films for gold RF MEMS

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2004, Pages 1923-1926

  DelRio, F W ^a   Herrmann, C F ^a,b   Hoivik, N ^a   George, S M ^b   Bright, V M ^a   Ebel, J L ^c   Strawser, R E ^c   Cortez, R ^c   Leedy, K D ^c  

^a UCB 450   (United States)

^b UNIVERSITY OF COLORADO   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Atomic layer deposition; Capacitive switches; Dielectric films; Reliability; RF MEMS

Indexed keywords

CAPACITANCE; DIELECTRIC FILMS; ELECTRIC SWITCHES; GOLD COMPOUNDS; LAYERED MANUFACTURING; NATURAL FREQUENCIES; OPTIMIZATION; RELIABILITY; THIN FILMS;

ATOMIC LAYER DEPOSITION; CAPACITIVE SWITCHES; ON-CAPACITANCE; PULL-DOWN VOLTAGES;

MICROELECTROMECHANICAL DEVICES;

EID: 4544248867     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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