Kelvin probe study of laterally inhomogeneous dielectric charging and charge diffusion in RF MEMS capacitive switches

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 492-495

  Herfst, R W ^a   Steeneken, P G ^a   Schmitz, J ^b   Mank, A J G ^c   Van Gils, M ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Capacitive switches; Dielectric charging; Diffusion; RF MEMS; Silicon nitride

Indexed keywords

MICROELECTROMECHANICAL DEVICES; RELIABILITY; SEMICONDUCTOR DOPING;

CAPACITIVE SWITCHES; DIELECTRIC CHARGING; DIFFUSION; RF MEMS; SILICON NITRIDE;

ELECTRIC SWITCHES;

EID: 51549118092     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558935     Document Type: Conference Paper

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