Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1022-1029

  Isai, Gratiela I ^a   Holleman, Jisk ^a   Wallinga, Mans ^a   Woerlee, Pierre H ^b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON RESONANCE; ELECTRON TRAPS; ELECTRON TUNNELING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA SOURCES; PRESSURE EFFECTS; SILANES; THIN FILMS;

CURRENT BIASES; CURRENT STRESS; FOWLER-NORDHEIM TUNNELING; TRAP DENSITY;

SILICA;

EID: 3242705159     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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