Effects of electrical leakage currents on MEMS reliability and performance

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 2, 2004, Pages 198-207

  Shea, Herbert R ^a,b   Gasparyan, Arman ^a   Chan, Ho Bun ^a,c   Arney, Susanne ^a   Frahm, Robert E ^a   López, Daniel ^a   Jin, Sungho ^d,e   McConnell, Robert P ^f,g  

^a LUCENT TECHNOLOGIES   (United States)

^b EPFL   (Switzerland)

^c UNIVERSITY OF FLORIDA   (United States)

^d AGERE SYSTEMS   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f NOKIA RESEARCH CENTER   (United States)

^g STANFORD UNIVERSITY   (United States)

Author keywords

Anodic oxidation; Charge dissipation layer; Dielectric charging; MEMS reliability

Indexed keywords

ANODIC OXIDATION; ELECTRIC BREAKDOWN; ELECTRODES; FAILURE ANALYSIS; MICROELECTROMECHANICAL DEVICES; NATURAL FREQUENCIES; RELIABILITY;

CHARGE DISSIPATION LAYERS; DIELECTRIC CHARGING; ELECTRICAL BREAKDOWN;

LEAKAGE CURRENTS;

EID: 4043108451     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.826350     Document Type: Article

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