Analytical model of the DC actuation of electrostatic MEMS devices with distributed dielectric charging and nonplanar electrodes

Journal of Microelectromechanical Systems

Volumn 16, Issue 5, 2007, Pages 1243-1253

  Rottenberg, Xavier ^a,b   De Wolf, Ingrid ^a   Nauwelaers, Bart K J C ^c   De Raedt, Walter ^a   Tilmans, Harrie A C ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

Author keywords

Dielectric materials; Electrostatic devices; Microelectromechanical devices; Reliability

Indexed keywords

CAPACITANCE; CHARGE DENSITY; CHARGE DISTRIBUTION; DIELECTRIC MATERIALS; ELECTROSTATIC ACTUATORS; STICTION;

AIR-GAP DISTRIBUTION; DIELECTRIC CHARGING;

MICROELECTROMECHANICAL DEVICES;

EID: 34948822844     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2007.899334     Document Type: Article

References (24)

1. J. De Natale, R. Mihailovich, and J. Waldrop, "Techniques for reliability analysis of MEMS RF switch," in Proc. 40th Annu. IRPS Apr. 2002, pp. 116-117.
2. J. Wibbeler, G. Pfeifer, and M. Hietschold, "Parasitic charging of dielectric surfaces in capacitive microelectromechanical systems (MEMS)," Sens. Actuators A, Phys., vol. 71, no. 1/2, pp. 74-80, Nov. 1998.
3. C. Goldsmith, J. Ehmke, A. Malczewski, B. Pillans, S. Eshelman, Z. Yao, J. Brank, and M. Eberly, "Lifetime characterization of capacitive RF MEMS switches," in Proc. IEEE MTT-S Int. Microw. Symp., May 2001, vol. 1, pp. 227-230.
4. J. R. Reid, "Dielectric charging effects on capacitive MEMS actuators," in Proc. IEEE MTT-S Int. Microw. Symp., RF MEMS Workshop Jun. 2002, CD-ROM.
5. W. M. van Spengen, R. Puers, R. P. Mertens, and I. De Wolf, "A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches," J. Micromech. Microeng., vol. 14, no. 4, pp. 514-521, Apr. 2004.
6. S. Melle, F. Flourens, D. Dubuc, K. Grenier, P. Pons, F. Pressecq, J. Kuchenbecker, J. L. Muraro, L. Bary, and R. Plana, "Reliability overview of RF MEMS devices and circuits," in Proc. 33rd Eur. Microw. Conf., Oct. 2003, pp. 37-40.
7. T. Lisec, C. Huth, and B. Wagner, "Dielectric material impact on capacitive RF MEMS reliability," in Proc. 12th Eur. Gallium Arsenide and Other Compound Semicond. Appl. Symp., Oct. 2004, pp. 471-474.
8. G. M. Rebeiz, "RF MEMS," in Theory, Design and Technology. Hoboken, NJ: Wiley, 2003, pp. 185-192.
9. S. S. McClure, L. D. Edmonds, R. Mihailovich, A. H. Johnston, P. Alonzo, J. De Natale, J. Lehman, and C. Yui, "Radiation effects in micro-electromechanical systems (MEMS): RF Relays," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3197-3202, Dec. 2002.
10. K. Chan, K. Garikipati, Z. K. Hsiau, and R. W. Dutton, "Characterization of electrostatically-actuated beams through capacitance-voltage measurements and simulations," in Proc. Model. and Simul. Microsyst., 1998, pp. 180-185.
11. K. Chan, K. Garikipati, and R. W. Dutton, "Characterization of contact electromechanics through capacitance-voltage measurements and simulations," J. Microelectromech. Syst., vol. 8, no. 2, pp. 208-217, Jun. 1999.
12. X. Yuan, S. Cherepko, J. Hwang, C. L. Goldsmith, C. Nordquist, and C. Dyck, "Initial observation and analysis of dielectric-charging effects on RF MEMS capacitive switches," in Proc. IEEE MTT-S Int. Microw. Symp., Jun. 2004, vol. 3, pp. 1943-1946.
13. P. Czarnecki, X. Rottenberg, R. Puers, and I. De Wolf, "Impact of biasing scheme and environment conditions on the lifetime of RF-MEMS capacitive switches," in Proc. MEMSWAVE, Jun. 2005, pp. 133-136.
14. Y. Nemirovsky and O. Bochobza-Degani, "A methodology and model for the pull-in parameters of electrostatic actuators," J. Microelectromech. Syst., vol. 10, no. 4, pp. 601-615, Dec. 2001.
15. X. Rottenberg, B. Nauwelaers, W. De Raedt, and H. A. C. Tilmans, "Distributed dielectric charging and its impact on RF MEMS devices," in Proc. 34th Eur. Microw. Conf., Oct. 2004, pp. 77-80.
16. J. I. Seeger and S. B. Crary, "Stabilization of electrostatically actuated mechanical devices," in Proc. Transducers Int., Jun. 1997, vol. 2, pp. 1133-1136.
17. J. F. Kucko, J. C. Petrosky, J. R. Reid, and Y. K. Yeo, "Non-charge related mechanism affecting capacitive MEMS switch lifetime," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 3, pp. 140-142, Mar. 2006.
18. S. J. Fonash, "Plasma processing damage in etching and deposition," IBM J. Res. Develop., vol. 43, no. 1/2, pp. 103-107, Jan.-Mar. 1999.
19. H. A. C. Tilmans and R. Legtenberg, "Electrostatically driven vacuumen-capsulated polysilicon resonators. Part II. Theory and performance," Sens. Actuators A, Phys., vol. 45, no. 1, pp. 67-84, Oct. 1994.
20. R. Modlinski, A. Witvrouw, P. Ratchev, I. R. Puers, J. den Toonder, and I. De Wolf, "Creep characterization of Al alloy thin films for use in MEMS applications," J. Microelectron. Eng., vol. 76, no. 1-4, pp. 271-277, Oct. 2004.
21. J. Papaioannou, M. Exarchos, V. Theonas, G. Wang, and J. Papapolymerou, "On the dielectric polarization effects in capacitive RF-MEMS switches," in Proc. IEEE MTT-S Int. Microw. Symp., Jun. 2005, pp. 761-764.
22. S. Melle, D. De Conto, L. Mazenq, D. Dubuc, B. Poussard, C. Bordas, K. Grenier, L. Bary, O. Vendier, J. L. Muraro, J. L. Cazaux, and R. Plana, "Failure predictive model of capacitive RF-MEMS," J. Microelectron. Rel., vol. 45, no. 9-11, pp. 1770-1775, Sep.-Nov. 2005.
23. J. Muldavin and G. M. Rebeiz, "High-isolation CPW MEMS shunt switches - Part 1: Modeling," IEEE Trans. Microw. Theory Tech., vol. 48, no. 6, pp. 1045-1052, Jun. 2000.
24. X. Rottenberg, H. Jansen, P. Fiorini, W. De Raedt, and H. A. C. Tilmans, "Novel RF-MEMS capacitive switching structures," in Proc. 32nd Eur. Microw. Conf., Sep. 2002, pp. 809-812.