Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering

Journal of Computational Electronics

Volumn 8, Issue 3-4, 2009, Pages 209-224

  Esseni, D ^a   Conzatti, F ^a   De Michielis, M ^a   Serra, N ^a   Palestri, P ^a   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

CMOS transistors; Crystal orientations; Electron transport; Hole transport; Strain engineering

Indexed keywords

CRYSTAL ORIENTATION;

CMOS TRANSISTORS; ELECTRON TRANSPORT; HOLE TRANSPORTS; NANO SCALE; ON-CURRENTS; PREDICTIVE CAPABILITIES; STRAIN ENGINEERING; TRANSPORT MODELLING;

TRANSISTORS;

EID: 84898466300     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-009-0284-0     Document Type: Article

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