Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures

Journal of Applied Physics

Volumn 89, Issue 2, 2001, Pages 1232-1250

  Fischetti, M V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000805232     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1332424     Document Type: Article

References (53)

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