Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 390-393

  Pham, A T ^a   Jungemann, C ^b   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTROSTATICS; HOLE MOBILITY; PHONON SCATTERING; SCHRODINGER EQUATION;

CHANNEL MOBILITY; ELECTROSTATIC POTENTIAL; OPTICAL PHONON SCATTERING; SURFACE ROUGHNESS SCATTERING;

SILICON;

EID: 39549093774     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430960     Document Type: Conference Paper

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