In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 225-228

  Irie, H ^a   Kita, K ^a   Kyuno, K ^a   Toriumi, A ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTROSTATICS; MOS DEVICES; MOSFET DEVICES; STRAIN; STRESS ANALYSIS;

COMPRESSIVE STRAIN; IN-PLANE MOBILITY ANISOTROPY; SURFACE ORIENTATION; UNI-AXIAL STRAINS;

HOLE MOBILITY;

CHANNEL DIRECTIONS; CONDITION; GUIDING PRINCIPLES; IN-PLANE MOBILITY ANISOTROPY; KEYS PARAMETERS; MOBILITY CHARACTERISTICS; OPTIMUM COMBINATION; PLANE CHANNELS; SURFACE ORIENTATION; UNIAXIAL STRAINS;

EID: 21644454069     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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