Theory of the motion at the band crossing points in bulk semiconductor crystals and in inversion layers

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Esseni, David ^a   Palestri, Pierpaolo ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CHEMICAL BONDS; CLARIFICATION; CROSSINGS (PIPE AND CABLE); CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; MOLECULAR ORBITALS; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; WAVE FUNCTIONS;

BULK CRYSTALS; BULK SEMICONDUCTORS; CROSSING POINTS; DINGER EQUATIONS; EFFECTIVE MASS APPROXIMATIONS; EIGEN FUNCTIONS; ENERGY DISPERSIONS; INVERSION LAYERS; NONLOCAL PSEUDOPOTENTIAL; NUMERICAL CALCULATIONS; OVERLAP INTEGRALS; PHYSICAL SYSTEMS; QUANTUM TRANSPORTS; SEMICLASSICAL TRANSPORTS; TIME DEPENDENTS;

EQUATIONS OF MOTION;

EID: 62549085189     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3078039     Document Type: Article

References (23)

1. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
2. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988).
3. K. Hess, in Monte Carlo device simulation: Full Band and Beyond, edited by, K. Hess, (Kluwer, Dordrecht, 1991).
4. M. V. Fischetti and S. E. Laux, Phys. Rev. B 48, 2244 (1993).
5. C. Jungemann, A. Edmunds, and W. L. Engl, Solid-State Electron. 36, 1529 (1993).
6. K. Hess, Advanced Theory of Semiconductor Devices (IEEE, New York, 1999).
7. D. Esseni, A. Abramo, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 50, 2445 (2003).
8. L. Lucci, P. Palestri, D. Esseni, L. Bergagnini, and L. Selmi, IEEE Trans. Electron Devices 54, 1156 (2007).
9. S. Datta, Quantum Transport, Atom to Transistor (Cambridge University Press, Cambridge, UK, 2005).
10. D. Esseni and P. Palestri, Phys. Rev. B 72, 165342 (2005).
11. T. Ando, A. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
12. D. K. Ferry and S. M. Goodnick, Transport in Nanostructures (Cambridge University Press, Cambridge, UK, 1997).
13. R. Oberhuber, G. Zandler, and P. Vogl, Phys. Rev. B 58, 9941 (1998).
14. M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, and K. Rim, J. Appl. Phys. 94, 1079 (2003).
15. E. Wang, P. Montagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, M. Stettler, and M. G. Giles, IEEE Trans. Electron Devices 53, 1840 (2006).
16. A. T. Pham, C. Jungemann, and B. Meinerzhagen, Proceedings of the European Solid State Device Research Conference (ESSDERC), 2007 (unpublished), p. 390.
17. J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
18. T. Manku and A. Nathan, J. Appl. Phys. 73, 1205 (1993).
19. M. De Michielis, D. Esseni, Y. L. Tsang, P. Palestri, L. Selmi, A. O. Neill, and S. Chattopadhyay, IEEE Trans. Electron Devices 54, 2164 (2007).
20. M. Bescond, N. Cavassilas, and M. Lannoo, Nanotechnology 18, 255201 (2007).
21. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967).
22. T. Low, Y. T. Hou, M. F. Li, C. Zhu, A. Chin, G. Samudra, L. Chan, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. 2003, 691.
23. S. E. Laux, Tech. Dig.-Int. Electron Devices Meet. 2004, 135.