A new multi subband Monte Carlo simulator for nano p-MOSFETs

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 67-70

  De Michielis, M ^a   Esseni, D ^a   Palestri, P ^a   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; MONTE CARLO METHODS; NONMETALS; SILICON; SIMULATORS;

ANALYTICAL DESCRIPTION; HOLE SUBBANDS; INTERNATIONAL CONFERENCES; MONTE CARLO; MONTE-CARLO SIMULATORS; MOSFET PERFORMANCE; P-MOSFETS; QUASI-BALLISTIC TRANSPORT; SIMULATOR DESIGN; SUB BANDS;

MOSFET DEVICES;

EID: 49049108754     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527142     Document Type: Conference Paper

References (14)

1. M.Yang, V. W.C.Chan, K.K.Chan, L.Shin, D.M.Fried, J.H:Stathis, A.I.Chou, E.Gusev. J.A.Ott. L.E.Burns, M.V.Fischetti, and M.Ieong, "Hybrid- orientation Technology (HOT): Opportunites and Challanges," IEEE Transaction on Electron Devices, vol. 53, no. 5, pp. 965-978, 2006.
2. R.Arghavani, L.Xia, H.M'Saad, M.Balseanu, G.Karunasiri, A.Mascarenhas, and S.E.Thompson. "A reliable and manufacturaba method to induce a stress of >1GPa on a P-Channel MOSFET in high volume manufacturing," IEEE Electron Device Letters, vol. 27, no. 2, pp. 114-116, 2006.
3. M. V. Fischetti, Z. Ren, P. M. Solomon. M. Yang, and K. Rim, "Six-band kp calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation. strain, and silicon thickness," Journal of Applied Physics, vol. 94, no. 2, pp. 1079-1095, 2003.
4. E.Wang, P.Montagne, L.Shifren, B.Obradovic, R.Kotlyar, S.Cea, M.Stettler, and M.G.Giles, "Physics of Hole Tranport in Strained silicon MOSFET Inversion Layers," IEEE Transaction on Electron Devices, vol. 53. no. 8, pp. 1840-1850. 2006.
5. L.Lucci, P.Palestri. D.Esseni, L. Bergagnini, and L. Selmi, "Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs," TED, vol. 54. no. 5. pp. 1156-1164, 2007.
6. B.Ghosh, X.Wang, X.Fan. L. F. Register, and S. K. Banerjee, "Monte Carlo Study of Germanium n- and pMOSFETs," TED, vol. 52. no. 4. pp. 547-553, 2005.
7. F.M.Bufler, A. Tsibizov, and A. Erlebach. "Scaling of Bulk pMOSFETs: (110) Surface Orientation Versus Uniaxial Compressive Stress." EDL. vol. 27, no. 12, pp. 992-994, 2006.
8. A. Rahman. G. Klimeck, and M. Lundstrom, "Novel channel materials for ballistic nanoscale MOSFETs: bandstructure effects," in IEEE IEDM Technical Digest, pp. 615-618, 2005.
9. M.De Michielis, D.Esseni, Y. L. Tsang, P.Palestri, L.Selmi, A. G. ONeill, and S.Chattopadhyay, "A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors," TED, vol. 54, no. 9, pp. 2164-2173, 2007.
10. P.Lugli and D. K.Ferry, "Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors," TED, vol. 32, no. 11, pp. 2431-2437, 1985.
11. S.Takagi, A.Toriumi, M.Iwase, and H.Tango, "On the Universality of Inversion-layer Mobilty in Si MOSFETs. Part 1- Effect of Substrate Impurity Concentration," IEEE Transaction on Electron Devices, vol. 41, no. 12. pp. 2357-62, 1994.
12. International Technology Roadmap for Semiconductors: 2006 Update. www.itrs.net/Links/2006Update/FinalToPost/PIDSUpdate.pdf. 2006.
13. D. Esseni. M.Mastrapasqua, G.K.Celler, C.Fiegna, L.Selmi, and E.Sangiorgi. "Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application," IEEE Transaction on Electron Devices, vol. 48, no. 12. pp. 2842-2850, 2001.
14. S. Eminente, D. Esseni, P. Palestri. C. Fiegna, L. Selmi. and E. Sangiorgi, "Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS Roadmap," IEEE Transaction on Electron Devices, vol. 52. no. 12. pp. 2736-2743, 2005.