Experimental and theoretical analysis of hole transport in uniaxially strained pMOSFETs

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 234-237

  Huet, K ^a,b   Feraille, M ^b   Rideau, D ^b   Delamare, R ^c   Aubry Fortuna, V ^a   Kasbari, M ^c   Blayac, S ^c   Rivero, C ^b   Bournel, A ^a   Tavernier, C ^b   Dollfus, P ^a   Jaouen, H ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b STMICROELECTRONICS   (France)

^c Center Microelectronics De Provence Georges Charpak   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; TRANSPORT PROPERTIES;

HOLE TRANSPORTS; INVERSION LAYERS; MOBILITY VARIATIONS; THEORETICAL ANALYSES; TRANSVERSE FIELDS; UNIAXIAL STRESSES; WAFER BENDING;

HOLE MOBILITY;

EID: 58049107316     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681741     Document Type: Conference Paper

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