Effects of shear strain on the conduction band in silicon: An efficient two-band k·p theory

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 386-389

  Sverdlov, Viktor ^a   Ungersboeck, Enzo ^a   Kosina, Hans ^a   Selberherr, Siegfried ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; SHEAR STRAIN; TENSILE STRESS;

LOW-FIELD MOBILITY ENHANCEMENT; MASS MODIFICATIONS; NONPARABOLICITY PARAMETER; VALLEY SHIFTS;

SILICON;

EID: 39549108665     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430959     Document Type: Conference Paper

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