Strained Si, Ge, and Si1-x Gex alloys modeled with a first-principles- optimized full-zone kp method

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 19, 2006, Pages

  Rideau, D ^a   Feraille, M ^a,c   Ciampolini, L ^a   Minondo, M ^a   Tavernier, C ^a   Jaouen, H ^a   Ghetti, A ^b  

^a STMICROELECTRONICS   (France)

^b STMICROELECTRONICS   (Italy)

^c UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751538015     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.195208     Document Type: Article

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