CMOS device scaling beyond 100nm

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 235-237

  Song, S ^a   Yi, J H ^a   Kim, W S ^a   Lee, J S ^a   Fujihara, K ^a   Kang, H K ^a   Moon, J T ^a   Lee, M Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; EPITAXIAL GROWTH; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITRIDES; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

DRIVE CURRENTS;

CMOS INTEGRATED CIRCUITS;

EID: 0034448253     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (51)