Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2475-2483

  Liow, Tsung Yang ^a,b   Tan, Kian Ming ^a   Weeks, Doran ^c   Lee, Rinus Tek Po ^a   Zhu, Ming ^a,d   Hoe, Keat Mun ^b,e   Tung, Chih Hang ^b   Bauer, Matthias ^c   Spear, Jennifer ^c   Thomas, Shawn G ^c   Samudra, Ganesh S ^a   Balasubramanian, N ^b,f   Yeo, Yee Chia ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c ASM AMERICA   (United States)

^d Technology Development Department   (Singapore)

^e Wong's Kong King International (Holdings) Ltd   (Hong Kong)

^f SILTERRA MALAYSIA SDN BHD   (Malaysia)

Author keywords

FinFET; In situ doped; Multiple gate field effect transistor (MuGFET); Silicon carbon; Strain; Stress

Indexed keywords

FINFET; IN SITU DOPED; MULTIPLE-GATE FIELD-EFFECT TRANSISTOR (MUGFET); SILICON-CARBON; STRAIN; STRESS;

SILICON;

EID: 50849117559     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.928025     Document Type: Article

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