The effect of general strain on the band structure and electron mobility of silicon

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2183-2190

  Ungersboeck, Enzo ^a   Dhar, Siddhartha ^a   Karlowatz, Gerhard ^a   Sverdlov, Viktor ^a   Kosina, Hans ^a   Selberherr, Siegfried ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Band structure; MOS devices; Shear strain; Strain stress; Strained silicon (Si); Surface mobility

Indexed keywords

BAND STRUCTURE; ELECTRON MOBILITY; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SHEAR STRAIN; STRESSES;

ANALYTICAL MODEL; BULK ELECTRON MOBILITY; NONLOCAL EMPIRICAL PSEUDOPOTENTIAL METHOD; SURFACE MOBILITY;

MOS DEVICES;

EID: 39549085834     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902880     Document Type: Article

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