Exploring the limits of stress-enhanced hole mobility

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 652-654

  Smith, Lee ^a   Moroz, Victor ^a   Eneman, Geert ^b,c,d   Verheyen, Peter ^b   Nouri, Faran ^e   Washington, Lori ^e   Jurczak, Malgorzata ^b   Penzin, Oleg ^a   Pramanik, Dipu ^a   De Meyer, Kristin ^b,c  

^a SYNOPSYS INC   (United States)

^b IMEC   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

^d RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^e APPLIED MATERIALS INC   (United States)

Author keywords

MOSFET; SiGe; Strained silicon; Technology computer aided design (TCAD)

Indexed keywords

COMPRESSIVE STRESS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STRESS CONCENTRATION;

SILICON GERMANIUM; STRESS ENHANCED HOLE MOBILITY; TECHNOLOGY COMPUTER AIDED DESIGN (TCAD);

MOSFET DEVICES;

EID: 26444439083     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.853668     Document Type: Article

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