Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 5, 1998, Pages 1122-1126

  Gâmiz, Francisco ^a   Lôpez Villanueva, Juan A ^a   Roldân, Juan B ^a   Carceller, Juan E ^a   Cartujo, Pedro ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

MOS devices; Silicon on insulator technology

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); MONTE CARLO METHODS; MOSFET DEVICES; PHONONS; QUANTUM THEORY; SURFACE ROUGHNESS; THIN FILM DEVICES;

BOLTZMANN TRANSPORT EQUATION; COULOMB SCATTERING; ELECTRON DISTRIBUTION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032072525     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.669557     Document Type: Article

References (19)

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