SCOPUS 정보 검색 플랫폼

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 97-103

Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation

(3) Ezaki, Tatsuya a Werner, Philipp a Hane, Masami a

a NEC CORPORATION (Japan)

Author keywords

inversion carrier mobility; Monte Carlo simulation; self consistent calculation; two dimensional eigenstates

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; INTELLIGENT SYSTEMS; MOSFET DEVICES; PHONONS; POISSON DISTRIBUTION; POISSON EQUATION; QUANTUM CHEMISTRY; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS; SIMULATORS;

DEVICE CHARACTERISTICS; EIGENSTATES; ELECTRON CONCENTRATION; ELECTROSTATIC POTENTIAL DISTRIBUTION; MONTE CARLO APPROACH; ONE-DIMENSIONAL SOLUTIONS; PHONON-SCATTERING MECHANISMS; SELF-CONSISTENT CALCULATION;

MONTE CARLO METHODS;

EID: 25144481263 PISSN: 15698025 EISSN: 15728137 Source Type: Journal
DOI: 10.1023/B:JCEL.0000011406.20864.06 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.