On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

Solid-State Electronics

Volumn 53, Issue 4, 2009, Pages 452-461

  Rideau, D ^a   Feraille, M ^a   Michaillat, M ^a   Niquet, Y M ^b   Tavernier, C ^a   Jaouen, H ^a  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

Author keywords

Envelope function; k.p; SOI MOSFET; Strain; Ultra thin silicon

Indexed keywords

MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

EFFECTIVE MASS APPROXIMATIONS; ENERGY BANDS; ENVELOPE-FUNCTION; FULL BANDS; FULLY DEPLETED SILICON ON INSULATORS; FULLY DEPLETED SOI; K.P; NEW RESULTS; SIMPLE MODELS; SOI MOSFET; STRAINED SILICONS; TRANSPORT PARAMETERS; ULTRA-THIN SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 63049133304     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.08.006     Document Type: Article

References (40)

1. Thompson SE, Sun G, Wu K, Lim J, Nishida T. In: Tech. digest IEDM 2004; 2004. p. 221.
2. Payet F, Boeuf F, Ortolland C, Skotnicki T. In: Tech. digest SSDM 2006; 2006. p. 176.
3. Hohenberg P., and Kohn W. Phys Rev 136 (1964) B864
4. Van de Walle C.G., and Martin R.M. Phys Rev B 34 (1986) 5621
5. Jancu J.-M., Scholz R., Beltram F., and Bassani F. Phys Rev B 57 (1998) 6493
6. Luisier M., Schenk A., Fichtner W., and Klimeck G. Phys Rev B 74 (2006) 205323
7. Williamson A.J., Wang L.W., and Zunger A. Phys Rev B 62 (2000) 12963
8. Cardona M., and Pollak F. Phys Rev 142 (1966) 530
9. Rideau D., Feraille M., Ciampolini L., Minondo M., Tavernier C., Jaouen H., et al. Phys Rev B 74 (2006) 195208
10. Luttinger J.M., and Kohn W. Phys Rev 97 (1955) 869
11. Wang L.W., and Zunger A. Phys Rev B 54 (1996) 11417
12. Foreman B.A. Phys Rev B 72 (2005) 165345
13. Foreman B.A. Phys Rev B 76 (2007) 045326
14. Foreman B.A. Phys Rev B 76 (2007) 045327
15. Esseni D., and Palestri P. Phys Rev B 72 (2005) 165342
16. Van der Steen J.P., Esseni D., Palestri P., Selmi L., and Hueting R.J.E. IEEE Trans Electron Dev 54 (2007) 1843
17. Fischetti M.V., et al. JAP 94 (2003) 1079
18. Pham A.T., Jungemann C., and Meinerzhagen B. IEEE Trans Electron Dev 54 (2007) 2174
19. Huet K., Bournel A., Dollfus P., Feraille M., Rideau D., Delamare R., et al. Experimental analysis and physical modelling of hole transport in uniaxially strained PMOS devices. In: Proc. ESSDERC, 38th European solid state device research conference, Glasgow; 2008.
20. Foreman B.A. Phys Rev B 52 (1995) 12241
21. Fischetti M.V., and Laux S.E. Phys Rev B 48 (1993) 2244
22. Richard S., Aniel F., and Fishman G. Phys Rev B 72 (2005) 245316
23. z) is located inside the first BZ.
24. z.
25. Foreman B.A. Phys Rev B 48 (1993) 4964
26. De Franceschi S., Jancu J.M., and Beltram F. Phys Rev B 59 (1999) 9691
27. All simulations have been performed with the multi-band Schrödinger-Poisson solver 'UTOX' developped at STMicroelectronics.
28. Dresselhaus G., Kip A.F., and Kittel C. Phys Rev 98 (1955) 368
29. Pikus E., and Bir G.L. Fiz Tverd Tela (Leningrad) 1 (1959) 1642 [Sov Phys Solid State 1960;1:1502]
30. Rideau D, Batail E, Monfray S, Tavernier C, Jaouen H. In: Proc. IEEE SISPAD; 2007.
31. Hou Y.T. Trans Electron Dev 48 (2001) 2893
32. Friesen M., Chutia S., Tahan C., and Coppersmith S.N. Phys Rev B 75 (2007) 115318 and references therein
33. Chao C.Y., and Chuang S.L. Phys Rev 46 (1992) 4110
34. z ← π / L.
35. Rideau D, Feraille M, Szczap M, Tavernier C, Jaouen H. In: Proc. ULIS; 2008.
36. Uchida K, Krishnamohan T, Saraswat KC, Nishi Y. In: Proc. IEDM; 2005. p. 129.
37. Rideau D, Feraille M, Tavernier C, Jaouen H. Transport masses in strained silicon NMOSFETS with different channel orientations. In: Proc. IEEE SISPAD; 2008.
38. Niquet YM, Rideau D. in press.
39. * TB model [38] includes a new parametrization and a new intrasite strain model (the parameters of which have been fitted in order to accuratly reproduce abinitio density-functional theory results); The results of this model are in very close agreement with the 30-level k.p model ones in terms of effective masses at valleys minima and deformation potential, but also concerning to the overall shape of the electronic energy dispersion (even at high energy or in a strained crystal).
40. Rideau D, Niquet YM, Batail E, Monfray S, Tavernier C, Jaouen H. In: Proc. IWCE; 2007.