Revised analysis of the mobility and ion degradation in high-k gate stacks: Surface optical phonons vs. remote Coulomb scattering

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 246-249

  Toniutti, Paolo ^a   Palestri, Pierpaolo ^a   Esseni, David ^a   Selmi, Luca ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON ENERGY LEVELS; MONTE CARLO METHODS; PHONONS;

COULOMB SCATTERINGS; CURRENT REDUCTIONS; EXPERIMENTAL DATUMS; GATE STACKS; HIGH-K DIELECTRICS; INTERFACIAL LAYERS; MOBILITY DEGRADATIONS; MOBILITY REDUCTIONS; MONTE CARLO SIMULATIONS; SHORT CHANNELS; SUB BANDS; SURFACE OPTICAL PHONONS;

DEGRADATION;

EID: 58049095522     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681744     Document Type: Conference Paper

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