Ensemble Monte Carlo study of channel quantization in a 25-nm n-MOSFET

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1864-1872

  Williams, S C ^a   Kirn, K W ^a   Holton, W C ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; GATES (TRANSISTOR); MATHEMATICAL MODELS; MONTE CARLO METHODS;

CARRIER SCATTERING; CHANNEL QUANTIZATION; POLYSILICON GATE DEPLETION;

MOSFET DEVICES;

EID: 0034294133     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870564     Document Type: Article

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