On the electron mobility enhancement in biaxially strained Si MOSFETs

Solid-State Electronics

Volumn 52, Issue 4, 2008, Pages 498-505

  Driussi, F ^a   Esseni, D ^a   Selmi, L ^a   Hellstrom P E ^b   Malm, G ^b   Hallstedt J ^b   Ostling M ^b   Grasby, T J ^c   Leadley, D R ^c   Mescot, X ^d  

^a UNIVERSITY OF UDINE   (Italy)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d IMEP LAHC   (France)

Author keywords

Characterization and Modeling; Mobility enhancement; Strained silicon; Surface roughness; Temperature dependence

Indexed keywords

COMPUTER SIMULATION; SCHRODINGER EQUATION; SILICON; SURFACE ROUGHNESS;

MOBILITY ENHANCEMENT; NUMERICAL SOLUTIONS; STRAINED SILICON;

MOSFET DEVICES;

EID: 40749144063     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.033     Document Type: Article

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