High performance 180 nm generation logic technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 197-200

  Yang, S ^a   Ahmed, S ^a   Arcot, B ^a   Arghavani, R ^a   Bai, P ^a   Chambers, S ^a   Charvat, P ^a   Cotner, R ^a   Gasser, R ^a   Ghani, T ^a   Hussein, M ^a   Jan, C ^a   Kardas, C ^a   Maiz, J ^a   McGregor, P ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ASPECT RATIO; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; FLUORINE COMPOUNDS; LOGIC GATES; RANDOM ACCESS STORAGE; SEMICONDUCTOR DOPING; SILICA;

STATIC RANDOM ACCESS MEMORY (SRAM);

TRANSISTORS;

EID: 0032276826     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)