Extreme high-performance n- and p-MOSFETs boosted by dual-metal/high-k gate damascene process using top-cut dual stress liners on (100) substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 293-296

  Mayuzumi, S ^a   Wang, J ^a   Yamakawa, S ^a   Tateshita, Y ^a   Hirano, T ^a   Nakata, M ^a   Yamaguchi, S ^a   Yamamoto, Y ^a   Miyanami, Y ^a   Oshiyama, I ^a   Tanaka, K ^a   Tai, K ^a   Ogawa, K ^a   Kugimiya, K ^a   Nagahama, Y ^a   Hagimoto, Y ^a   Yamamoto, R ^a   Kanda, S ^a   Nagano, K ^a   Wakabayashi, H ^a   Tagawa, Y ^a   Tsukamoto, M ^a   Iwamoto, H ^a   Saito, M ^a   Kadomura, S ^a   Nagashima, N ^a   more..

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS LINERS; DAMASCENE GATE; DAMASCENE PROCESSING; DUAL STRESS LINERS; GA TE LENGTHS; P-MOSFETS;

ELECTRON DEVICES;

EID: 50249098713     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418926     Document Type: Conference Paper

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