A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors

Journal of Computational and Theoretical Nanoscience

Volumn 5, Issue 6, 2008, Pages 1106-1114

  Comparone, G ^a   Palestri, P ^a   Esseni, D ^a   Lucci, L ^a   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

Monte Carlo; MOSFET; Strained silicon

Indexed keywords

MONTE CARLO METHODS; MOSFET DEVICES;

MOBILITY ENHANCEMENT; MONTE CARLO MODEL; MOS-FET; NMOS TRANSISTORS; PREDICTIVE MODELING; STATE OF THE ART; STRAIN ENGINEERING; STRAINED SILICON CHANNEL;

STRAINED SILICON;

EID: 48949083271     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2008.2544     Document Type: Article

References (46)

1. J. Welser, J. L. Hoyt, S. Takagi, and J. F. Gibbons, Strain dependence of the performance enhancement in strained-Si n-MOSFETs, IEDM (1994), p. 373.
2. K. Rim, J. L. Hoyt, and J. F. Gibbons, IEEE Trans. Electron Devices 47, 1406 (2000).
3. S. Thompson, G. Sun, J. Lim, and T. Nishida, Key difference for uniaxial process vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs, International Electron Device Meeting (2004), pp. 221-224.
4. K. W. Ang, K. J. Chui, V. Bliznetsov, Y. Wang, L. Y. Wong, C. H. Tung, N. Balasubramanian, M. F. Li, G. Samudra, and Y. C. Yeo, Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement, International Electron Device Meeting (2005), pp. 496-500.
5. T. Sanuki, A. Oishi, Y. Morimasa, S. Aota, T. Kinoshita, R. Hasumi, Y. Takegawa, K. Isobe, H. Yoshimura, M. Iwai, K. Sunouchi, and T. Noguchi, Scalability of strained silicon CMOSFET and high drive current enhancement in the 40 nm gate length technology, International Electron Device Meeting (2003), pp. 65-68.
6. M. M. Rieger and P. Vogl, Phys. Rev. B 48, 14 276 (1993).
7. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
8. K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime, IEDM Technical Digest (2005), pp. 135-138.
9. S. E. Laux, Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignement, IEDM Technical Digest (2004), pp. 135-138.
10. M. V. Fischetti, S. E. Laux, and A. Kumar, Simulation of quantum electronic transport in small devices: A master equation approach, IEDM Technical Digest (2003), pp. 691-694.
11. S. Eminente, D. Esseni, P. Palestri, C. Fiegna, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 52, 2736 (2005).
12. P. Palestri, D. Esseni, S. Eminente, C. Fiegna, E. Sangiorgi, and L. Selmi, IEEE Trans. Electron Devices 52, 2727 (2005).
13. M. V. Fischetti and S. E. Laux, Phys. Rev. B 48, 2244 (1993).
14. C. Jungemann, A. Edmunds, and W. L. Engl, Solid State Electronics 36, 1529 (1993).
15. F. Gamiz, J. A. Lopez-Villanueva, J. B. Roldan, J. E. Carceller, and P. Cartujo, IEEE Trans. Electron Devices 45, 1122 (1998).
16. S. C. Williams, K. W. Kim, and W. C. Holton, IEEE Trans. Electron Devices 47, 1864 (2000).
17. T. Ezaki, P. Werner, and M. Hane, Journal of Computational Electronics 2, 97 (2003).
18. L. Lucci, P. Palestri, D. Esseni, and L. Selmi, Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration, IEDM Technical Digest (2005), pp. 631-634.
19. L. Lucci, P. Palestri, D. Esseni, and L. Selmi, Solid State Electronics 49, 1529 (2005).
20. L. Lucci, P. Palestri, D. Esseni, L. Bergagnini, and L. Selmi, IEEE Trans. Electron Devices 54, 1156 (2007).
21. P. Lugli and D. K. Ferry, IEEE Trans. Electron Devices 32, 2431 (1985).
22. F. Venturi, R. K. Smith, E. Sangiorgi, M. R. Pinto, and B. Riccò, IEEE Trans. Computer-Aided Design 8, 360 (1989).
23. P. Palestri, N. Barin, D. Esseni, and C. Fiegna, IEEE Trans, Electron Devices 53, 1433 (2006).
24. P. Palestri, N. Barin, D. Esseni, and C. Fiegna, IEEE Trans. Electron Devices 53, 1443 (2006).
25. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967).
26. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
27. D. Esseni, IEEE Trans. Electron Devices 51, 394 (2004).
28. D. K. Ferry and S. E. Goodnick, Transport in Nanostructures, Cambridge University Press (1997).
29. D. Esseni and A. Abramo, IEEE Trans. Electron Devices 50, 1665 (2003).
30. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2357 (1994).
31. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
32. D. Esseni, A. Abramo, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 50, 2445 (2003).
33. F. Rochette, M. Cassé, M. Morris, D. Blanchier, C. Leroux, B. Guillaumot, G. Reimbold, and F. Boulanger, Electron mobility enhancement in uniaxially strained MOSFETs: Extraction of the effective mass variation, ESSDERC (2006), pp. 93-96.
34. M. Fischetti, F. Gámiz, and W. Hänsch, J. Appl. Phys. 92, 7320 (2002).
35. M. H. Evans, M. Caussanel, R. D. Schrimpf, and S. T. Pantelides, First-principles modeling of double-gate UTSOI MOSFETs, International Electron Device Meeting (2005), pp. 611-614.
36. D. Ponton, L. Lucci, P. Palestri, D. Esseni, and L. Selmi, Assessment of the impact of biaxial strain on the drain current of decanometric n-MOSFET, ESSDERC (2006), pp. 166-169.
37. S. Takagi, J. Hoyt, J. Welser, and J. Gibbons, J. Appl. Phys. 80, 1567 (1996).
38. M. Lundstrom, IEEE Electron Device Lett. 18, 361 (1997).
39. L. Lucci, P. Palestri, D. Esseni, and L. Selmi, Simulation of doublegate nano-MOSFETs with the multi-subband Monte Carlo method, Proceedings Workshop ULIS (2006), pp. 89-92.
40. M. Lundstrom and Z. Ren, IEEE Trans. Electron Devices 49, 133 (2002).
41. P. Palestri, R. Clete, D. Esseni, L. Lucci, and L. Selmi, Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs, IEDM Technical Digest (2006), pp. 945-948.
42. D. Esseni and P. Palestri, Phys. Rev. B 72, 165 342 (2005).
43. D. Esseni and P. Palestri, IEEE Electron Device Lett. 26, 413 (2005).
44. C. Jungemann, N. Subba, J.-S. Goo, C. Riccobene, Q. Xiang, and B. Meinerzhagen, Solid State Elect. 48, 1417 (2004).
45. V. Aubry-Fortuna, P. Dollfus, and S. Galdin-Retailleau, Solid State Elect. 49, 1320 (2005).
46. E. Sangiorgi and M. R. Pinto, IEEE Trans. Electron Devices ED-39, 356 (1992).