Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 7, 2003, Pages 1665-1674

  Esseni, David ^a   Abramo, Antonio ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

Mobility degradation; Mobility modeling; MOSFET mobility; Remote Coulomb scattering; Ultrathin oxide

Indexed keywords

DEGRADATION; DIELECTRIC DEVICES; ELECTRON MOBILITY; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); POLYSILICON; ULTRATHIN FILMS;

COULOMB SCATTERINGS;

MOSFET DEVICES;

EID: 0043028324     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.814973     Document Type: Article

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