Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study

Solid-State Electronics

Volumn 53, Issue 7, 2009, Pages 706-711

  Conzatti, F ^a   De Michielis, M ^a   Esseni, D ^a   Palestri, P ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; CHANNEL MOBILITY; INDUCED MOBILITY; INJECTION VELOCITY; MONTE CARLO STUDY; MOS TRANSISTORS; NANOSCALE TRANSISTORS; P-MOSFETS; SCATTERING CO-EFFICIENT; SUB-BAND;

BACKSCATTERING; DRAIN CURRENT; MONTE CARLO METHODS; MOS DEVICES; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

MOSFET DEVICES;

EID: 67349116807     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.02.019     Document Type: Article

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