A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2164-2173

  De Michielis, Marco ^a   Esseni, David ^a   Tsang, Y L ^b   Palestri, Pierpaolo ^a   Selmi, Luca ^a   O'Neill, Anthony G ^b   Chattopadhyay, Sanatan ^b,c  

^a UNIVERSITY OF UDINE   (Italy)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF CALCUTTA   (India)

Author keywords

Crystal orientations; Hole mobility; Inversion layer; Modeling; pMOSFET; Valence band structure

Indexed keywords

BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; CRYSTAL ORIENTATION; HOLE MOBILITY; MODELS; TWO DIMENSIONAL; VALENCE BANDS;

HOLE BAND STRUCTURE; INVERSION LAYER; VALENCE BAND STRUCTURE;

MOSFET DEVICES;

EID: 41749122416     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902873     Document Type: Article

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