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Volumn 83, Issue 21, 1999, Pages 4341-4344

Mechanism of boron diffusion in silicon: An Ab initio and kinetic monte carlo study

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Indexed keywords


EID: 0001739179     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.4341     Document Type: Article
Times cited : (184)

References (30)
  • 9
    • 0347714184 scopus 로고
    • J. W. Corbett, and S. Mahayan, North-Holland, New York
    • U. Gösele, and T. Y. Tan, in Defects in Semiconductors II, J. W. Corbett, and S. Mahayan, (North-Holland, New York, 1983), p. 45.
    • (1983) Defects in Semiconductors II , pp. 45
    • Gösele, U.1    Tan, T.Y.2
  • 20
    • 85035266245 scopus 로고
    • thesis, Technische Universität Wien
    • G. Kresse, thesis, Technische Universität Wien, 1993.
    • (1993)
    • Kresse, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.