Clusters formation in ultralow-energy high-dose boron-implanted silicon

Applied Physics Letters

Volumn 83, Issue 26, 2003, Pages 5407-5409

  Cristiano, F ^a   Hebras, X ^a   Cherkashin, N ^a   Claverie, A ^a   Lerch, W ^b   Paul, S ^b  

^a LAAS CNRS   (France)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DOPING (ADDITIVES); HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; LOW TEMPERATURE EFFECTS; MOS DEVICES; PARTICLE BEAMS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SOLUBILITY; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

SHEET RESISTANCE; SPREADING RESISTANCE PROFILING (SRP);

CRYSTAL DEFECTS;

EID: 0942299446     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637440     Document Type: Article

References (20)

1. E. C. Jones and E. Ishida, Mater. Sci. Eng., R. 24, 1 (1998).
2. S. Solmi, E. Landi, and F. Baruffaldi, J. Appl. Phys. 68, 3250 (1990).
3. A. Agarwal, H. J. Gossman, D. J. Eaglesham, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes, and R. Simonton, Mater. Sci. Semicond. Process. 1, 17 (1998).
4. N. E. B. Cowern, M. J. J. Theunissen, F. Roozeboom, and J. G. M. van Berkum, Appl. Phys. Lett. 75, 181 (1999).
5. L. Pelaz, G. H. Gilmer, H.-J. Gossmann, C. S. Rafferty, M. Jaraiz, and J. Barbolla, Appl. Phys. Lett. 74, 3657 (1999).
6. P. Pichler, Mater. Res. Soc. Symp. Proc. 717, 103 (2002).
7. A. Armgliato, D. Nobili, P. Ostoja, M. Servidori, and S. Solmi, in Electrochem. Soc. Proc. 77-2: Semiconductor Silicon 1977, edited by H. R. Huff and E. Sirtl, (1977), p. 638.
8. T. L. Aselage, J. Mater. Res. 13, 1786 (1998).
9. N. E. B. Cowern, K. T. F. Janssen, and H. F. F. Jos, J. Appl. Phys. 68, 6191 (1990).
10. S. Solmi, F. Baruffaldi, and R. Canteri, J. Appl. Phys. 69, 2135 (1991).
11. L. H. Zhang, K. S. Jones, P. H. Chi, and D. S. Simons, Appl. Phys. Lett. 67, 2025 (1995).
12. P. K. Madden and S. M. Davidson, Radiat. Eff. 14, 271 (1972).
13. W. K. Wu and J. Washburn, Cryst. Lattice Defects 7, 39 (1977).
14. J. A. Lambert and P. S. Dobson, Philos. Mag. 44, 1043 (1981).
15. M. Pasemann, D. Hoehl, A. L. Aseev, and O. P. Pchelyakov, Phys. Status Solidi 80, 135 (1983).
16. M. L. Jenkins, M. A. Kirk, and H. Fukushima, J. Electron Microsc. 48, 323 (1999).
17. A. Claverie, B. Colombeau, B. De Mauduit, C. Bonafos, X. Hebras, G. B. Assayag, and F. Cristiano, Appl. Phys. A: Mater. Sci. Process. 76, 1025 (2003).
18. L. Radic, A. D. Lilak, and M. E. Law, Appl. Phys. Lett. 81, 826 (2002).
19. J. P. Hirth and J. Lothe, Theory of Dislocations, (McGraw-Hill, New York, 1968), pp. 462-465.
20. J. F. Gibbons, Radiat. Eff. 6, 313 (1970).