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T. Saito, J. Xia, R. Kim, T. Aoki, H. Kobayashi, Y. Kamakura, and K. Taniguchi, Tech. Dig. Int. Electron Devices Meet., 497 (1998). When Si is implanted into Si wafers with a uniform B concentration, B clusters appear at the position of 311 defects because this is the region of higher I concentration.
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85034144169
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note
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2/controls the growth of B clusters.
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