Atomistic mechanism of boron diffusion in silicon

Physical Review Letters

Volumn 97, Issue 25, 2006, Pages

  De Salvador, Davide ^a   Napolitani, Enrico ^a   Mirabella, Salvatore ^b   Bisognin, Gabriele ^a   Impellizzeri, Giuliana ^b   Carnera, Alberto ^a   Priolo, Francesco ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; DIFFUSION; ELECTRON ENERGY LEVELS; SILICON;

ATOMISTIC MECHANISM; CHARGE STATE; FREE HOLE CONCENTRATION; SUPERLINEAR TREND;

BORON;

EID: 33845798494     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.97.255902     Document Type: Article

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