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Volumn 25, Issue 6, 2000, Pages 39-44

Enhanced diffusion in silicon processing

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; LOW TEMPERATURE PRODUCTION; POINT DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

EID: 0033738477     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2000.97     Document Type: Article
Times cited : (40)

References (52)
  • 26
    • 0031333908 scopus 로고    scopus 로고
    • Defects and diffusion in silicon processing
    • edited by T. Diaz de la Rubia, S. Coffa, P.A. Stolk, and C.S. Rafferty, Pittsburgh
    • M.D. Giles, S. Yu, H.W. Kennel, and P.A. Packan, in Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P.A. Stolk, and C.S. Rafferty (Mater. Res. Soc. Symp. Proc. 469, Pittsburgh, 1997) p. 253.
    • (1997) Mater. Res. Soc. Symp. Proc. , vol.469 , pp. 253
    • Giles, M.D.1    Yu, S.2    Kennel, H.W.3    Packan, P.A.4
  • 27
    • 0343522474 scopus 로고    scopus 로고
    • Materials Research Society Meeting, San Francisco, April 1
    • K.S. Jones, presented at Symposium E, Materials Research Society Meeting, San Francisco, April 1, 1997.
    • (1997) Symposium E
    • Jones, K.S.1
  • 36
    • 0001476421 scopus 로고
    • M. Kohyama and S. Takeda, Phys. Rev. B 46 (1992) p. 12305; Phys. Rev. B 51 (1995) p. 13111.
    • (1995) Phys. Rev. B , vol.51 , pp. 13111
  • 42
    • 0032671802 scopus 로고    scopus 로고
    • Si front-end processing - Physics and technology of dopant-defect interactions
    • edited by H.-J.L. Gossmann, T.E. Haynes, M.E. Law, A. Nylandsted Larsen, and S. Odanaka, Warrendale, PA
    • M. Omri, B. de Mauduit, and A. Claverie, in Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions, edited by H.-J.L. Gossmann, T.E. Haynes, M.E. Law, A. Nylandsted Larsen, and S. Odanaka (Mater. Res. Soc. Symp. Proc. 568, Warrendale, PA, 1999) p. 219.
    • (1999) Mater. Res. Soc. Symp. Proc. , vol.568 , pp. 219
    • Omri, M.1    De Mauduit, B.2    Claverie, A.3
  • 43
    • 0000252816 scopus 로고    scopus 로고
    • An interesting 4-interstitial structure has already been identified from theory in A. Arai and S. Takeda, Phys. Rev. Lett. 78 (1997) p. 4265, and several research groups are now investigating clusters with larger numbers of atoms.
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 4265
    • Arai, A.1    Takeda, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.