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Volumn 71, Issue 26, 1997, Pages 3862-3864

The interstitial fraction of diffusivity of common dopants in Si

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EID: 0001528106     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120527     Document Type: Article
Times cited : (65)

References (29)
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    • It has been estimated that the characteristic time to reach local equilibrium is <1 ms at 800°C (C. S. Rafferty, SYSPAD 97).
    • SYSPAD 97
    • Rafferty, C.S.1
  • 17
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    • L. Pelaz, L. M. Jaraiz, G. H. Gilmer, H.-J. Gossmann, Appl. Phys. Lett. 70, 2285 (1997); P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997); T. K. Mogi, H.-J. Gossmann, D. J. Eaglesham, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, T. Boone, J. M. Poate, and M. O. Thompson, Proceedings of the 5th International Symposium on ULSI Science and Technology, Reno, 1995, edited by E. M. Middlesworth and H. Massoud (The Electrochemical Society, Pennington, NJ, 1995), p. 145.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 2285
    • Pelaz, L.1    Jaraiz, L.M.2    Gilmer, G.H.3    Gossmann, H.-J.4
  • 18
    • 0005346036 scopus 로고    scopus 로고
    • L. Pelaz, L. M. Jaraiz, G. H. Gilmer, H.-J. Gossmann, Appl. Phys. Lett. 70, 2285 (1997); P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997); T. K. Mogi, H.-J. Gossmann, D. J. Eaglesham, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, T. Boone, J. M. Poate, and M. O. Thompson, Proceedings of the 5th International Symposium on ULSI Science and Technology, Reno, 1995, edited by E. M. Middlesworth and H. Massoud (The Electrochemical Society, Pennington, NJ, 1995), p. 145.
    • (1997) J. Appl. Phys. , vol.81 , pp. 6031
    • Stolk, P.A.1    Gossmann, H.-J.2    Eaglesham, D.J.3    Jacobson, D.C.4    Rafferty, C.S.5    Gilmer, G.H.6    Jaraiz, M.7    Poate, J.M.8    Luftman, H.S.9    Haynes, T.E.10
  • 20
    • 0002734525 scopus 로고
    • edited by F. F. Y. Wang North-Holland, Amsterdam, The Netherlands
    • R. B. Fair, in Impurity Doping Processes in Silicon, edited by F. F. Y. Wang (North-Holland, Amsterdam, The Netherlands, 1981), p. 315.
    • (1981) Impurity Doping Processes in Silicon , pp. 315
    • Fair, R.B.1
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    • note
    • Errors include only those due to the SIMS analysis. Including an estimated uncertainty of 100% in the diffusion coefficients due to furnace calibration and errors in the literature values increases the error margins to ±0.02 in Eq. (7), ±0.09 in Eq. (8), and ±0.03 in Eq. (9).
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    • Ph.D. thesis, Cornell University
    • T. Mogi, Ph.D. thesis, Cornell University, 1996.
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    • to be published
    • J. Zhu, T. Diaz de la Rubia, L. H. Yang, C. Mathiot, and G. H. Gilmer, Phys. Rev. B 54, 4741 (1996); J. Zhu. Mater. Res. Soc. Symp. Proc. (to be published).
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    • Zhu, J.1
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    • G. H. Gilmer, T. Diaz de la Rubia, D. M. Stock, and M. Jaraiz, Nucl. Instrum. Methods Phys. Res. B 102, 247 (1995); M. Tang, L. Colombo, J. Zhu, and T. Diaz de la Rubia, Phys. Rev. B 55, 14 279 (1997).
    • (1997) Phys. Rev. B , vol.55 , pp. 14279
    • Tang, M.1    Colombo, L.2    Zhu, J.3    Diaz De La Rubia, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.