First-principles study of boron diffusion in silicon

Physical Review Letters

Volumn 83, Issue 21, 1999, Pages 4345-4348

  Windl, W ^a   Bunea, M M ^a,b   Stumpf, R ^a   Dunham, S T ^c   Masquelier, M P ^a  

^a MOTOROLA INC   (United States)

^b Boston University   (United States)

^c Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000065634     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.4345     Document Type: Article

References (35)

1. W. Frank, U. Gösele, H. Mehrer, and A. Seeger, in Diffusion in Crystalline Solids, G. E. Murch, and A. S. Nowick, (Academic Press, New York, 1984), p. 63.
2. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289, (1989).
3. Defects and Diffusion in Silicon Processing, T. Diaz de la Rubia, et al. MRS Symposia Proceedings No. 469 (Materials Research Society, Pittsburgh, 1997).
4. A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440, (1999).
5. G. D. Watkins, in Radiation Damage in Semiconductors, P. Baruch, (Dunod, Paris, 1965), p. 97.
6. U. Gösele, A. Plössl, and T. Y. Tan, in Process Physics and Modeling in Semiconductor Technology, G. R. Srinivasan, C. S. Murthy, and S. T. Dunham, (Electrochemical Society, Pennington, NJ, 1996), p. 309.
7. C. S. Nichols, C. G. Van de Walle, and S. T. Pantelides, Phys. Rev. B. 40, 5484, (1989).
8. J. Zhu, T. Diaz de la Rubia, L. H. Yang, C. Mailhiot, and G. H. Gilmer, Phys. Rev. B. 54, 4741, (1996).
9. J. Zhu, Phys. Rev. B. p. 151.
10. J. Zhu, Comput. Mater. Sci. 12, 309, (1998).
11. M.-J. Caturla, M. D. Johnson, and T. Diaz de la Rubia, Appl. Phys. Lett. 72, 2736, (1998).
12. A. D. Lilak, et al. in Proceedings of the 1998 International Electron Devices Meeting (IEDM), San Francisco, CA (IEEE, Piscataway, NJ, 1998), p. 493.
13. M. M. Bunea, and S. T. Dunham, in Semiconductor Process and Device Performance Modeling, S. T. Dunham, and J. S. Nelson, MRS Symposia Proceedings No. 490 (Materials Research Society, Pittsburgh, 1998), p. 3.
14. S. K. Theiss, et al. in Multiscale Modeling of Materials, T. Diaz de la Rubia, et al. MRS Symposia Proceedings No. 538 [Materials Research Society, Pittsburgh(to be published)].
15. W. Windl, M. M. Bunea, R. Stumpf, S. T. Dunham, and M. P. Masquelier, in Proceedings of the Second International Conference on Modeling and Simulation of Microsystems, San Juan, Puerto Rico, 1999 (Computational Publications, Cambridge, MA, 1999), p. 369.
16. Silicon Front-End Processing, H-J. L. Gossmann, et al. MRS Symposia Proceedings No. 568 (Materials Research Society, Pittsburgh, 1999), p. 91.
17. D. M. Ceperley, and B. J. Alder, Phys. Rev. Lett. 45, 566, (1980).
18. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865, (1996).
19. G. Kresse, and J. Hafner, Phys. Rev. B. 47, 558, (1993).
20. G. Kresse, J. Hafner, Phys. Rev. B. 49, 14 251, (1994).
21. G. Kresse, and J. Furthmüller, Comput. Mater. Sci. 6, 15, (1996).
22. G. Kresse, J. Furthmüller, Phys. Rev. B. 54, 11 169, (1996).
23. G. Kresse, and J. Furthmüller, VASP, the Guide (Vienna University of Technology, Vienna, 1999), Chap. 8.6. [http://tph.tuwien.ac.at/˜vasp/guide/vasp.html].
24. W. A. Harrison, Phys. Rev. B. p. 211.
25. W. Windl, O. F. Sankey, and J. Menéndez, Phys. Rev. B. 57, 2431, (1998).
26. R. D. Harris, J. L. Newton, and G. D. Watkins, Phys. Rev. Lett. 48, 1271, (1982).
27. H. Jónsson, G. Mills, and K. W. Jacobsen, in Classical and Quantum Dynamics in Condensed Phase Simulations, B. J. Berne, G. Ciccotti, and D. F. Coker, (World Scientific, Singapore, 1998), p. 385.
28. B. Sadigh, T. J. Lenosky, S. K. Theiss, M.-J. Caturla, T. Diaz de la Rubia, and M. A. Foad, preceding Letter, Phys. Rev. Lett. 83, 4341, (1999).
29. B. Folmer, Y. M. Haddara, and M. E. Law, .
30. M. Miyake, J. Appl. Phys. 57, 1861, (1985).
31. A. F. W. Willoughby, et al. J. Appl. Phys. 59, 2392, (1986).
32. G. D. Watkins, Phys. Rev. B. 12, 5824, (1975).
33. N. E. B. Cowern, G. F. A. van de Walle, D. J. Gravesteijn, and C. J. Vriezema, Phys. Rev. Lett. 67, 212, (1991).
34. W. Windl, .
35. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B. 52, 16 542, (1995).