B activation enhancement in submicron confined implants in Si

Applied Physics Letters

Volumn 87, Issue 13, 2005, Pages 1-3

  Bruno, E ^a   Mirabella, S ^a   Impellizzeri, G ^a   Priolo, F ^a   Giannazzo, F ^b   Raineri, V ^b   Napolitani, E ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DISSOLUTION; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON;

SCANNING CAPACITANCE MICROSCOPY; THERMAL ANNEALS;

BORON;

EID: 28344449875     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2061867     Document Type: Article

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