Dopant‐defect interactions in hydrogen‐free amorphous silicon

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 73, Issue 2, 1996, Pages 245-259

  Muller G ^a   Hellmich, W ^a   Krotz G ^a   Kalbitzer, S ^b   Greaves, G N ^c   Derst, G ^c   Dent, A J ^c   Dobson, B R ^c  

^a DAIMLER AG   (Germany)

^b MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

^c DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001544211     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418639609365822     Document Type: Article

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