Transient enhanced diffusion of boron in Si

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 8919-8941

  Jain, S C ^a   Schoenmaker, W ^a   Lindsay, R ^a   Stolk, P A ^b   Decoutere, S ^a   Willander, M ^c   Maes, H E ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BORON ATOM; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; DISLOCATION LOOP; DOPANT IONS; ENHANCED DIFFUSION; EXCESS SI; EXTENDED DEFECT; HIGH CONCENTRATION; HIGH TEMPERATURE; HIGHER TEMPERATURES; INTERSTITIAL CLUSTERS; INTERSTITIAL POSITIONS; INTERSTITIALS; RAMP RATES; SHALLOW JUNCTION; SI SURFACES; SI-BASED DEVICES; SUB-100 NM; TRANSIENT ENHANCED DIFFUSION;

ATOMS; CRYSTAL DEFECTS; DIFFUSION; OSTWALD RIPENING; RAPID THERMAL ANNEALING; SILICON; WATER INJECTION;

BORON;

EID: 0036607386     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471941     Document Type: Article

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