Tight-binding studies of the tendency for boron to cluster in c-Si. II. Interaction of dopants and defects in boron-doped Si

Journal of Applied Physics

Volumn 84, Issue 5, 1998, Pages 2476-2486

  Luo, Weiwei ^a   Rasband, Paul B ^a   Clancy, Paulette ^a   Roberts, Bruce W ^b,c  

^a Cornell University   (United States)

^b Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

^c Starwave Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001471414     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368451     Document Type: Article

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