Boron diffusion in amorphous silicon

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 245-248

  Venezia, V C ^a   Duffy, R ^a   Pelaz, L ^b   Hopstaken, M J P ^a   Maas, G C J ^a   Dao, T ^a   Tamminga, Y ^a   Graat, P ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Amorphous; Boron; Silicon

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; BORON; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DIFFUSION; EPITAXIAL GROWTH; ION IMPLANTATION;

AMORPHOUS; ARHENNIUS BEHAVIOR; SOLID-PHASE-EPITAXIAL REGROWTH; TRANSIENT ENHANCED DIFFUSION;

AMORPHOUS SILICON;

EID: 27844454291     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.079     Document Type: Conference Paper

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