Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 3-13

  Lerch, W ^a   Paul, S ^a   Niess, J ^a   McCoy, S ^b   Gelpey, J ^b   Cristiano, F ^c   Severac, F ^c   Fazzini, P ^d   Martinez Limia, A ^e   Pichler, P ^e   Kheyrandish, H ^f   Bolze, D ^g  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b Mattson Technology Canada Inc   (Canada)

^c LAAS CNRS   (France)

^d CEMES CNRS   (France)

^e FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^f CSMA MATS   (United Kingdom)

^g IHP   (Germany)

Author keywords

Advanced activation thermal cycles; Amorphous Si; Arsenic; Boron; Combination flash annealing and spike RTA; Combination spike RTA and flash annealing; Crystalline Si; Defect evolution; Dopant simulation; Flash annealing; Hall mobility measurement; Hall effect measurements; Multiple flash annealing; NMOS; OED; PMOS; Reactive gaseous ambient; Spike RTA

Indexed keywords

AMORPHOUS SILICON; BORON; CHEMICAL ACTIVATION; DEFECTS; DIFFUSION; HALL MOBILITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

ADVANCED ACTIVATION THERMAL CYCLES; AMORPHOUS SI; COMBINATION FLASH ANNEALING AND SPIKE RTA; COMBINATION SPIKE RTA AND FLASH ANNEALING; CRYSTALLINE SI; DEFECT EVOLUTION; DOPANT SIMULATION; FLASH ANNEALING; HALL EFFECT MEASUREMENT; HALL MOBILITY MEASUREMENT; MULTIPLE FLASH ANNEALING; NMOS; OED; PMOS; REACTIVE GASEOUS AMBIENT; SPIKE RTA;

ARSENIC;

EID: 56949104064     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.08.017     Document Type: Article

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