Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Aboy, Maria ^a   Pelaz, Lourdes ^a   Marqús, Luis A ^a   López, Pedro ^a   Barbolla, Juan ^a   Duffy, R ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT PROFILES; INTERSTITIAL CONTENT PATHWAY; SOLID-PHASE EPITAXIAL REGROWTH (SPER); TRANSIENT ENHANCED DIFFUSION (TED);

AMORPHIZATION; ANNEALING; BORON; COMPUTER SIMULATION; CONCENTRATION (PROCESS); CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; ION IMPLANTATION; MONTE CARLO METHODS; MOSFET DEVICES;

SILICON;

EID: 20944452014     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1904159     Document Type: Article

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